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Showing posts with label Solids，Semiconductors and P-N Junction Diode. Show all posts
Showing posts with label Solids，Semiconductors and P-N Junction Diode. Show all posts

59. The increase in the width of the depletion region in a p − n junction diode is due to :

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58. For a p-type semiconductor, which of the following statements is true ?

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57. An LED is constructed from a p-n junction diode using GaAsP. The energy gap is 1.9eV. The wavelength of the light emitted will be equal to ?

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56. In a p-n junction diode, change in temperature due to heating ___ ?

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55. Which one of the following represents forward bias diode ?

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54. Consider the junction diode as ideal. The value of current flowing through AB is :

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53. If in a p-n junction, a square input signal of 10 V is applied as shown, then the output across Rl will be :

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52. In the given figure, a diode D is connected to an external resistance R = 100Ω and an e.m.f. of 3.5 V. If the barrier potential developed across the diode is 0.5 V, the current in the circuit will be :

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51. The given graph represents V − I characteristic for a semiconductor device. Which of the following statement is correct?

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50. The barrier potential of a p − n junction depends on:

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(A) type of semi conductor material (B) amount of doping (C) temperature Which one of the following is correct?

49. In a n-type semiconductor, which of the following statement is true?

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48. In an unbiased p − n junction, holes diffuse from the p-region to n-region because of ___ ?

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47. Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is :

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47. Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is :

46. C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator whereas Si is intrinsic semiconductor. This is because :

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46. C and Si both have same lattice structure, having 4 bonding electrons in each. However, C is insulator whereas Si is intrinsic semicondu...

45. In forward biasing of the p − n junction ___ ?

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44. If a small amount of antimony is added to germanium crystal ___ ?

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43. In the following figure, the diodes which are forward biased, are ?

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42. Pure Si at 500 K has equal number of electron (ne) and hole (nh) concentrations of 1.5 × 1016 m−3 . Doping by indium increases nh to 4.5 × 1022 m−3 . The doped semiconductor is of ?

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41. A zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit shown in figure. The current through the diode is ?

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41. A zener diode, having breakdown voltage equal to 15 V, is used in a voltage regulator circuit shown in figure. The current through the d...

40. Which one of the following statement is FALSE ?

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