Semiconductor Materials MCQ Worksheet (CBSE / NEET / JEE)
Practice these 20 multiple choice questions on Semiconductor Materials covering:
- Intrinsic Semiconductors
- Extrinsic Semiconductors
- p-type Semiconductors
- n-type Semiconductors
Section A: Conceptual Questions
- The conductivity of an intrinsic semiconductor depends mainly on:
A) Impurity concentration
B) Temperature
C) Pressure
D) Volume - In an intrinsic semiconductor, the number of free electrons is:
A) Greater than holes
B) Less than holes
C) Equal to holes
D) Zero - The forbidden energy gap in semiconductors is typically:
A) 0 eV
B) ~1 eV
C) ~5 eV
D) Infinite - Which of the following is a semiconductor material?
A) Copper
B) Silicon
C) Glass
D) Rubber - Doping a pure semiconductor increases its:
A) Resistance
B) Conductivity
C) Band gap
D) Mass - A pentavalent impurity added to silicon produces:
A) p-type semiconductor
B) n-type semiconductor
C) Intrinsic semiconductor
D) Insulator - In n-type semiconductor, majority charge carriers are:
A) Holes
B) Electrons
C) Protons
D) Ions - The minority carriers in p-type semiconductor are:
A) Holes
B) Electrons
C) Neutrons
D) Positrons - Which impurity is used for making p-type semiconductor?
A) Phosphorus
B) Arsenic
C) Boron
D) Nitrogen - In extrinsic semiconductors, conduction is mainly due to:
A) Only electrons
B) Only holes
C) Majority carriers
D) Minority carriers
Section B: Numerical / Application-Based Questions
- If the temperature of an intrinsic semiconductor increases, its conductivity:
A) Decreases
B) Increases
C) Remains constant
D) Becomes zero - In an intrinsic semiconductor, if electron concentration is 1016 m-3, hole concentration is:
A) 108
B) 1016
C) 1032
D) Zero - A semiconductor doped with trivalent impurity has:
A) Excess electrons
B) Excess holes
C) Equal carriers
D) No carriers - The donor energy level lies:
A) Near valence band
B) Near conduction band
C) Mid-gap
D) Outside bands - Which has highest conductivity?
A) Intrinsic semiconductor
B) p-type semiconductor
C) n-type semiconductor
D) Insulator - Mobility of electrons compared to holes is:
A) Less
B) Equal
C) Greater
D) Zero - Silicon doped with arsenic becomes:
A) p-type
B) n-type
C) Intrinsic
D) Insulator - The Fermi level in intrinsic semiconductor lies:
A) Near conduction band
B) Near valence band
C) At mid-gap
D) Outside gap - Increasing doping concentration will:
A) Decrease conductivity
B) Increase conductivity
C) Not affect conductivity
D) Make it insulator - In p-type semiconductor, current is mainly due to:
A) Electrons
B) Holes
C) Ions
D) Neutrons
Answer Key
| Q | Ans | Q | Ans | Q | Ans | Q | Ans |
|---|---|---|---|---|---|---|---|
| 1 | B | 6 | B | 11 | B | 16 | C |
| 2 | C | 7 | B | 12 | B | 17 | B |
| 3 | B | 8 | B | 13 | B | 18 | C |
| 4 | B | 9 | C | 14 | B | 19 | B |
| 5 | B | 10 | C | 15 | C | 20 | B |
Quick Revision Notes
- Intrinsic semiconductor: Pure material, number of electrons = number of holes
- Extrinsic semiconductor: Doped to increase conductivity
- p-type: Majority carriers are holes (trivalent doping)
- n-type: Majority carriers are electrons (pentavalent doping)
- Key concept: Conductivity increases with temperature and doping
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